2N5983 2N5984 2N5985(SILICON) MJE5983 MJE5984 MJE5985
HIGH POWER NPN SILICON TRANSISTORS
de~igned for use in general pu...
2N5983 2N5984 2N5985(SILICON) MJE5983 MJE5984 MJE5985
HIGH POWER
NPN SILICON
TRANSISTORS
de~igned for use in general purpose amplifier and switching applications.
DC Current Gain Specified to 8 Amperes hFE = 20·120@ IC = 4.0 Adc = 7.0 (Min) @ IC = 8.0 Adc
Collector· Emitter Sustaining Voltage -
VCEO(sus) = 40 Vdc (Min) - 2N5983. MJE5983
= 60 Vdc (Min) - 2N5984. MJE5984 = 80 Vdc (Min) - 2N5985. MJE5985
High Current Gain - 8andwidth Product fT = 2.0 MHz (Min) @ IC = 500 mAdc
Complements to
PNP Transistors 2N5980. 2N5981. 2N5982 and MJE5980. MJE5981. MJE5982
Choice of Packages - 2N5983 Series - Case 90 MJE5983 Series - Case 199
*MAXIMUM RATINGS
Rating
Svmbol
Collector~Emitter Voltage
Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous
Peak
VeEO VeB VEB
Ie
Base Current
Total Device Dissipation @Te= 250e Derate above 2SoC
Ie
Po
Operating and Storage Junctior TJ.Tst9 Temperature Range
2N5983 MJE5983
40 60
-
2N5984 MUE5984
60
80
5.0
8.0 15...
