Document
2N59S6 2N59S72N59SS PNP (SILICON) 2N59S9 2N5990 2N5991 NPN
HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS
· .. designed for use in general-purpose amplifier and switch ing circu its.
• Collector-Base Voltage - VCBO = 60 Vdc - 2N59B6, 2N5989 = 80 Vdc - 2N5987, 2N5990
=100 Vdc - 2N5988, 2N5991
• Collector-Emitter Voltage - VCEO = 40 Vdc - 2N59B6, 2N5989
=60 Vdc - 2N5987, 2N5990
= 80 Vdc - 2N5988, 2N5991
• DC Current Gain hFE = 20-120 @ IC = 6.0 Adc
= =7.0 (Min) @ IC 12 Adc
• Collector-Emitter Saturation Voltage VCE(sat) = 0.7 Vdc (Max) @ IC = 6.0 Adc
12 AMPERE
POWER TRANSISTORS COMPLEMENTARY SILICON
40, 50, 80 VOLTS 100 WATTS
"MAXIMUM RATINGS
Rating Collector-Base Voltage Collector-Emitter Voltage Eminer-Base Voltage Collector Current - Continuous
Peak Base Current Total Device Dissipation @TC = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
2N5986 2N5987 2N5988 Symbol 2N5989 2N5990 2N5991
Ves
60
80 100
VeEO
40
60
SO
VES
5.0
I.