2N5646 (SILICON)
NPN SILICON RF POWER TRANSISTOR
· .. designed for 12.5 Volt, UHF large signal amplifier applications ...
2N5646 (SILICON)
NPN SILICON RF POWER
TRANSISTOR
· .. designed for 12.5 Volt, UHF large signal amplifier applications required in industrial and consumerFMequipmentoperating to520 MHz.
Low lead inductance stripline package for ease of design and in· creased broadband capability
Balanced Emitter Construction to protect against device damage due to load mismatch
Specified 12.5 Volt, 470 MHz Characteristics-
Output Power =12 Watt Minimum Gain =4.7 dB Efficiency =60%
-MAXIMUM RATINGS
Rating Coliector·Emitter Voltage
Symbol VCEO
Value 18
Collector·8818 Voltage Emitter·Base Voltage
VC8 VE8
36 4.0
Collector Current - Continuous
IC 2.0
Total Device Dissipation@Tc=250 C Derate above 2SoC
Po
30 0.171
Unit Vde Vde Vde Ade watts wfDc
Operating and Storage Junction Temperature Range
TJ,Tstg
-65 to +200
°c
-ELECTRICAL CHARACTERISTICS (TC = 250 C unless otherwise noted)
I I I I ICharacteristic
Symbol Min
Max
Unit
OFF CHARACTERISTICS
Colleetor·Emitter Brea...
