2N5670

2N5668 (SILICON) 2N5669 2N5670 SILICON N·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS Depletion Mode (TypeA) Junction Field-EffectTransistors designed for VHF amplifier and mixer applications. Low Cross Modulation and Intermodulation Distortion Drain and Source Interchangeable Low 100-MHz Noise Figure - NF = 2.5 dB (Max) Low Reverse Transfer and Input Capcitances- Crss = 1.0 pF (Typ); Ciss =4.7 pF (Typ) High Maximum Stable Gain Due to Drain and Gate Lead Separation N·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS (Type A) *MAXIMUM RATINGS Rating Drain-Source Voltage ·Drain-Gate Voltage *Reverse Gate-SOu~ce Voltage ·Forward Gate Current Drain Current *Total Device Dissipation@TA = 250 C Derate above 2SoC ·Storage Temperature Range Svmbol VOS VOG VGSR IGF 10 Po '" Tstg III Value 25 25 25 10 20 310 2.82 -65 to +150 Unit Vde Vdc Vdc mAde mAde mW mW/oC °c -Indicates JEDEC Registered Data. (11 Continuous package improvements have enhanced these guaranteed Maximum ...