FEATURE
for switching and AF amplifier application These transistors are subdivided into three groups A, B and C accordi...
FEATURE
for switching and AF amplifier application These
transistors are subdivided into three groups A, B and C according to their current gain.
BC546···BC550
NPN Silicon Epitaxial Planar
Transistor
Absolute Maximum Ratings(Ta=25℃)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage Collector Current (DC)
BC46 BC547 BC550 BC548 BC549 BC546 BC547 BC550 BC548 BC549
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOLS
VCBO
VCEO
VEBO
IC ICM Ptot Tj Tstg
Value
80 50 30 65 45 30
6 100 200 500 150 -65 to +150
UNITS
V
V
V mA mA
mW
℃ ℃
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1
BC546···BC550
Characteristics at Ta=25℃
Parameter
DC Current Gain At VCE=5V, IC=2mA
Current Gain Group A B C
Collector Base Cutoff Current
At VCB=30V Emitter Base Cutoff Current At VEB=5V Collector Base Breakdown Voltage at IC = 100 μA
Collector Emitter...
