BC857

BC856- BC860 PNP Epitaxial Silicon Transistor BC856- BC860 PNP Epitaxial Silicon Transistor Features Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits Low Noise: BC859, BC860 Complement to BC846 ... BC850 Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : BC856 : BC857/860 : BC858/859 VCEO Collector-Emitter Voltage : BC856 : BC857/860 : BC858/859 VEBO Emitter-Base Voltage IC Collector Current (DC) PC Collector Power Dissipation TJ Junction Temperature TSTG Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* Ta=25°C unless otherwise noted Symbol Parameter Test Condition ICBO hFE VCE (sat) VBE (sat) VBE (on) fT Collector Cut-off Current VCB= -30V, IE=0 DC Current Gain VCE= -5V, IC= -2mA Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA Base-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA Base-Emitter On Voltage VCE= -5V, IC= -2mA VCE= -5V, IC= -10mA Current Gain Bandwidth Product VCE= -5V, IC= -10mA f=100MHz Cob Output Capacitance NF Noise Figure : BC856/857/858 : BC859/860 : BC859 : BC860 * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% VCB= -10V, IE=0, f=1MHz VCE= -5V, IC= -200µA RG=2KΩ, f=1KHz VCE= -5V, IC= -200µA RG=2KΩ, f=30~15000Hz Min. 110 -600 August 2006 tm 3 2 S...