2N5798

2N5797 (SILICON) thru 2N5800 SILICON P·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS Symmetrical depletion mode Junction Field·Effect Transistors de· signed primarily for low-power, audio amplifier applications. Low Reverse Transfer Capacitance Crss = 1.0 pF (Maxi Drain and Source Interchangeable Low Gate Reverse Current - IGSS = 1.0 nAdc (Maxi Unibloc Plastic Package Encapsulation P·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS *MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Total Device Dissipation @TC"" 2SoC Derate above 25°C Operating and Storage Junction Temperature Range "'Indicates JEDEC Registered Data. Symbol VOS VOG VGSR IGF Po TJ,TsIg Value 40 40 40 10 350 2.8 -651o +150 Unit Vdc Vdc Vdc mAde mW mW/oC °c U'PLA~NEH",r~-~ 01 PIN 1 SOURCE D--'-Illl!ltt 2 ORAIN ~V¥,3 GATE E, M r-'" 0 G JI DIM C D G J 2.160 2.420 K 12.700 L TP 1.270 TP M 0.013 0.076 0.33 CASE 29·01 TO-92 2-270 2N5797...