2N5797 (SILICON)
thru
2N5800
SILICON P·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS
Symmetrical depletion mode Junction Fi...
2N5797 (SILICON)
thru
2N5800
SILICON P·CHANNEL JUNCTION FIELD·EFFECT
TRANSISTORS
Symmetrical depletion mode Junction Field·Effect
Transistors de· signed primarily for low-power, audio amplifier applications.
Low Reverse Transfer Capacitance Crss = 1.0 pF (Maxi
Drain and Source Interchangeable Low Gate Reverse Current -
IGSS = 1.0 nAdc (Maxi Unibloc Plastic Package Encapsulation
P·CHANNEL JUNCTION FIELD·EFFECT
TRANSISTORS
*MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Total Device Dissipation @TC"" 2SoC
Derate above 25°C Operating and Storage Junction
Temperature Range
"'Indicates JEDEC Registered Data.
Symbol VOS VOG VGSR IGF
Po
TJ,TsIg
Value 40 40 40 10 350 2.8
-651o +150
Unit Vdc Vdc Vdc mAde mW mW/oC
°c
U'PLA~NEH",r~-~ 01
PIN 1 SOURCE D--'-Illl!ltt
2 ORAIN
~V¥,3 GATE
E, M
r-'" 0
G JI
DIM C D
G J 2.160 2.420 K 12.700 L TP 1.270 TP M 0.013 0.076 0.33
CASE 29·01 TO-92
2-270
2N5797...