2N5841 (SILICON) 2N5842
NPN SILICON RF TRANSISTORS
. designed to provide ultra·fast switching times in current· mode ci...
2N5841 (SILICON) 2N5842
NPN SILICON RF
TRANSISTORS
. designed to provide ultra·fast switching times in current· mode circuits at collector currents to 80 mAdc.
High Current·Gain-Bandwidth Product - @ IC = 25 mAdc fT = 2.2 GHz (Min) 2N5841 1.7 GHz (Min) 2N5842
Low Collector· Base CapacitanceCcb = 1.5 pF (Max) @ VCB = 4.0 Vdc
Fast Non·Saturated Switching Times - @ IC = 30 mAdc Typical Values td(on) = 0.4 ns tr = 0.18 ns td(off)= 0.3 ns tf = 0.20 ns
NPN SILICON RF
TRANSISTORS
f
'MAXIMUM RATINGS Rating
COllector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @TC - 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Indicates JEDEC Registered Data.
Symbol VeEO Vee VEe
Ie Po
TJ, Tstg
Value 10 20 3.0 100
350 2.0 -65 to +200
Unit Vdc Vdc
Vdc mAde
mW mw/oe
DC
FF=U'friI[I~~SEATINi
K
PLANE
~
STYLE 10
PIN 1. EMITTER
2. SASE
--II--0
3. COLLECTOR
-N
4. CASE
~
l{.:;-oJ G
...
