2N5848 (SILICON)
The RF Line
NPN SILICON RF POWER TRANSISTOR
· .. designed primarily for use in large-signal amplifier ...
2N5848 (SILICON)
The RF Line
NPN SILICON RF POWER
TRANSISTOR
· .. designed primarily for use in large-signal amplifier driver and output stages, the 2N5B4B is intended for use in industrial communications equipment operating at frequencies to BO MHz.
Optimized for Operation from a 12.5 Volt Supply 20 Watts (Min) RF Power Output at 50 MHz Balanced Emitter Construction for Burn Out Protection
20W-50MHz
RF POWER
TRANSISTOR
NPN SILICON
*MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @;rC- 25°C
Derate above 25°C Storage Temperature Range
Stud Torque (11 "Indicates JEOEC Registered Data. (1)For repeated assembly use 5 in-Ibs.
Symbol VCEO VCB VEB
IC
Po
Tstg
Value 24 4B 4.0 3.5 50 285
-65 to +200
6.5
Unit Vdc Vdc Vdc Adc Watts mW/oC
°c
in-Ibs.
MILLIMETERS INCHES DIM MIN MAX MIN MAX
A 940 978 0370 0.385
8 81' 838 0.320 0330
55' ""C lS03
0 E 178
(]710 0750
2'804'
22 ...
