2N5849

2N5849 (SILICON) NPN SILICON RF POWER TRANSISTOR · .. designed primarily for use in large·signal amplifier output stages, the 2N5849 is intended for use in industrial communications equip· ment operating at frequencies to 80 MHz. Optimized for Operation from a 12.5 Volt Supply 40 Watts (Min) RF Power Output at 50 MHz Balanced Emitter Construction for Burn Out Protection 40W-50 MHz RF POWER TRANSISTOR NPN SILICON 'MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation @TC - 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCB VEB IC PD T stg Value 24 4B 4.0 7.0 100 571 -65 to +200 Unit Vdc Vdc Vdc Adc Watts mW/oC °c -Indicates JEDEC Registered Data. This device IS designed for RF operation. The total device dissipation rating applies onlv when the device is operated as an RF amplifier. MILLIMETERS INCHES DIM MIN MAX MIN MAX A 12.57 12.90 8 10.54 10.80 C 21.2...