2N5859

2N5859 (SILICON) NPN SILICON ANNULAR SWITCHING TRANSISTOR ... designed for high·current, !ligh·speed switching applications. Ideally suited for ferrite core and plated wire memory driver, hammer driver, or MOS translator applications. Excellent Current·Gain - Bandwidth Product fT = 250 MHz (Min) @IC = 50 mAde Low Collector·Base Capacitance - Ccb =7.0 pF (Max) @VCB = 10 Vdc Low Coliector·Emitter Saturation Voltage VCE(sat) = 0.7 Vdc (Max) @ IC = 1.0 Adc Fast Switching Times @ IC = 1.0 Adc ton = 35 ns (Max) toff = 60 ns (Max) NPN SILICON SWITCHING TRANSISTOR "MAXIMUM RATINGS Rating Coliector~Emitter Voltage Collector-Base Voltage Emitter·Base Voltage Collector Current - Continuous Total Power Dissipation @TA 25°C Oerate above 25°C Total Power Dissipation@Tcz: 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO Vce Vee IC Po Po TJ,T stg Value 40 80 6.0 2.0 1.0 6.72 5.0 28.6 -65 to +200 Unit Vdc Vdc Vdc Adc Watt mW/oC Watt...