Document
2N5861 (SILICON)
NPN SILICON ANNULAR MEMORY DRIVER
. designed for medium·current, high·speed switching applications. Ideally suited for ferrite core memory driver circuits.
• Collector·Emitter Breakdown Voltage BVCEO ~ 50 Vdc (Min) @ IC ~ 10 mAdc
• Low Coliector·Emitter Saturation Voltage VCE(sat) ~ 0.5 Vdc (Max) @ IC ~ 500 mAdc
• Low Coliector·Base Capacitance Ccb ~ 7.0 pF (Max) @ VCB ~ 10 Vdc
• Fast Switching Times@ IC ~ 500 mAdc -ton ~ 25 ns (Max) toft ~ 60 ns (Max)
NPN SILICON MEMORY DRIVER
TRANSISTOR
'MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @TA ::::; 25°C
Derate above 25°C
Total Device Dissipation @TC =25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
*Indlcates JEDEC RegIstered Data
Symbol VCEO VCB VEB
IC
Po
Po
TJ,T stg
Value 50
100 6.0 2.0 1.0 6.0
5.0 28.6 -65 to +200
Unit Vdc
Vdc Vdc
Adc
Watts mW/oC
Watts mW/oC
°c
MILLIMETER.