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2N5861 Dataheets PDF



Part Number 2N5861
Manufacturers ETC
Logo ETC
Description NPN SILICON ANNULAR MEMORY DRIVER TRANSISTOR
Datasheet 2N5861 Datasheet2N5861 Datasheet (PDF)

2N5861 (SILICON) NPN SILICON ANNULAR MEMORY DRIVER . designed for medium·current, high·speed switching applications. Ideally suited for ferrite core memory driver circuits. • Collector·Emitter Breakdown Voltage BVCEO ~ 50 Vdc (Min) @ IC ~ 10 mAdc • Low Coliector·Emitter Saturation Voltage VCE(sat) ~ 0.5 Vdc (Max) @ IC ~ 500 mAdc • Low Coliector·Base Capacitance Ccb ~ 7.0 pF (Max) @ VCB ~ 10 Vdc • Fast Switching Times@ IC ~ 500 mAdc -ton ~ 25 ns (Max) toft ~ 60 ns (Max) NPN SILICON MEMORY DRIVE.

  2N5861   2N5861



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2N5861 (SILICON) NPN SILICON ANNULAR MEMORY DRIVER . designed for medium·current, high·speed switching applications. Ideally suited for ferrite core memory driver circuits. • Collector·Emitter Breakdown Voltage BVCEO ~ 50 Vdc (Min) @ IC ~ 10 mAdc • Low Coliector·Emitter Saturation Voltage VCE(sat) ~ 0.5 Vdc (Max) @ IC ~ 500 mAdc • Low Coliector·Base Capacitance Ccb ~ 7.0 pF (Max) @ VCB ~ 10 Vdc • Fast Switching Times@ IC ~ 500 mAdc -ton ~ 25 ns (Max) toft ~ 60 ns (Max) NPN SILICON MEMORY DRIVER TRANSISTOR 'MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @TA ::::; 25°C Derate above 25°C Total Device Dissipation @TC =25°C Derate above 25°C Operating and Storage Junction Temperature Range *Indlcates JEDEC RegIstered Data Symbol VCEO VCB VEB IC Po Po TJ,T stg Value 50 100 6.0 2.0 1.0 6.0 5.0 28.6 -65 to +200 Unit Vdc Vdc Vdc Adc Watts mW/oC Watts mW/oC °c MILLIMETER.


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