2N5864 (SILICON)
PNP SILICON ANNULAR TRANSISTOR
· .. designed for use in general-purpose amplifier and medium-speed swi...
2N5864 (SILICON)
PNP SILICON ANNULAR
TRANSISTOR
· .. designed for use in general-purpose amplifier and medium-speed switching applications.
High·Coliector·Emitter Breakdown Voltage-
BVCEO = 70 Vdc (Mini @ IC = 10 mAdc
DC Current Gain Specified - 10 mA to 500 mA
High.Coliector Current - IC = 1.5 Adc Continuous
PNPSILICON GENERAL-PURPOSE
TRANSISTOR
'MAXIMUM RATINGS
Rating Collector~Emitter Voltage Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Power Dissipation @ TA = 25°C Derate above 25°C
Total Power Dissipation @ TC = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol VCEO VCB VEB
IC Po
Po
TJ. Tstg
Value 70
90 5.0
1.5 1.25 7.15
8.75 50
-65 to +200
·1 ndicates JEDEC Registered Data ·Motorola Guarantees this data in addition to JEOEC Registered Data.
Unit Vdc
Vdc
Vdc Adc
Watts mW/oC
Watts mW/oC
°c
Pin 1. Emitter 2. Bast! 3. Collector
l~r::R::~I: Ac re--- Lt
/ _:::::::.u K
_---.J.SEATING PLA...
