2N5865 (SILICON)
PNP SILICON ANNULAR TRANSISTOR·
. designed where high·current, high·voltage conditions are require· ments for general·purpose switching and amplifier applications.
Collector·Emitter Breakdown Voltage BVCEO = 50 Vdc (Min) @ IC = 10 mAdc
DC Current Gain Specified - 1.0 mA to 500 mA Turn·On Time ..
ton = 120 ns (Max) @ IC = 500 mAdc
PNP...
