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MMCFA43 Dataheets PDF



Part Number MMCFA43
Manufacturers Motorola
Logo Motorola
Description FLIP-CHIP NPN HIGH-VOLTAGE TRANSISTOR
Datasheet MMCFA43 DatasheetMMCFA43 Datasheet (PDF)

MMCFA43 (SILICON) • Flip-Chip - NPN silicon annular transistor designed for applications requiring high breakdown voltages with low saturation voltages. • Complement to PNP Type MMCFA93 MAXIMUM RATINGS Rating Coliector~Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCEO VCB VEa IC Value 200 200 6.0 500 Unit Vdc Vdc Vdc mAdc FLIP-CHIP NPN HIGH-VOLTAGE TRANSISTOR ELECTRICAL CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage.

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MMCFA43 (SILICON) • Flip-Chip - NPN silicon annular transistor designed for applications requiring high breakdown voltages with low saturation voltages. • Complement to PNP Type MMCFA93 MAXIMUM RATINGS Rating Coliector~Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCEO VCB VEa IC Value 200 200 6.0 500 Unit Vdc Vdc Vdc mAdc FLIP-CHIP NPN HIGH-VOLTAGE TRANSISTOR ELECTRICAL CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage (Ie = 1.0 mAde, 'B =0) Collector-Base Breakdown Voltage (Ie = 100 /-LAde, IE = 0) Emitter-Base Breakdown Voltage (IE = 100 /-LAde, IC = 0) Collector Cutoff Current (VCB = 160 Vde, IE = 0) Emitter Cutoff Current (VBE = 4.0 Vdc, IC = 0) De Current Gain (lc = 1.0 mAde, VCE = 10 Vde) (Ie = 10 mAde, VCE = 10 Vdc) (Ie = 30 mAde, VeE = 10 Vdc) Collector-Emitter Saturation Voltage (Ie = 20 mAde, 'B = 2.0 mAde) Base-Emitter Saturation Voltage (Ie = 20 mAde, 'B = 2.0 mAdc) Symbol BVCEO BVCBO BVEBO '.


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