Document
MMCFA43 (SILICON)
•
Flip-Chip - NPN silicon annular transistor designed for applications requiring high breakdown voltages with low saturation voltages.
• Complement to PNP Type MMCFA93
MAXIMUM RATINGS
Rating Coliector~Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
Symbol VCEO VCB VEa
IC
Value 200 200 6.0 500
Unit Vdc Vdc Vdc mAdc
FLIP-CHIP NPN HIGH-VOLTAGE
TRANSISTOR
ELECTRICAL CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
(Ie = 1.0 mAde, 'B =0)
Collector-Base Breakdown Voltage
(Ie = 100 /-LAde, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 100 /-LAde, IC = 0)
Collector Cutoff Current
(VCB = 160 Vde, IE = 0)
Emitter Cutoff Current
(VBE = 4.0 Vdc, IC = 0)
De Current Gain
(lc = 1.0 mAde, VCE = 10 Vde) (Ie = 10 mAde, VCE = 10 Vdc) (Ie = 30 mAde, VeE = 10 Vdc)
Collector-Emitter Saturation Voltage
(Ie = 20 mAde, 'B = 2.0 mAde)
Base-Emitter Saturation Voltage
(Ie = 20 mAde, 'B = 2.0 mAdc)
Symbol BVCEO BVCBO BVEBO
'.