2N5336 (SILICON)
thru
2N5339
Medium-power NPN silicon transistors designed for switching and wide band amplifier applic...
2N5336 (SILICON)
thru
2N5339
Medium-power
NPN silicon
transistors designed for switching and wide band amplifier applications.
CASE 79
(TO·39)
02
1 00
STYLE 1:
3 PIN 1. EMITTER 2. BASE 3. COLLECTOR
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Base Current
Total Device Dissipation @ TC = 25°C Derate above 25°C
Operating. and Storage Junction Temperature Range
VCEO VCB VEB
IC IB PD
TJ' Tstg
THERMAL CHARACTERISTICS
Characteristic
Symb91
Thermal ReSistance, Junction to Case
() JC
2N5336 2N5337
80
2N5338 2N5339
100
80 100
6.0
5.0
1.0
6.0 34.3 -65 to +200
Unit
Vdc Vdc Vdc Adc Adc Watts mWrC °c
Max Unit
29.2
°C/W
FIGURE 1 - POWER-TEMPERATURE DERATING CURVE
6.0
~ 5.0 !;( ;: :; 4.0 o
e~n 3.0
'C"i
a:
3 2.0
o
Q.
ci
Q.
1.0
o o
~
"" ~ ~ "'- ~........ ~ ~ "'"'~
20 40 60 80 100 120 140 160 180 200
TC. CASE TEMPERATURE (DC)
Safe Area Curves are indicated by Figure 5. All limits are a...
