BC857A

BC857 BC858 SMALL SIGNAL PNP TRANSISTORS Type BC857A BC857B BC858A BC858B s Marking 3E 3F 3J 3K 2 3 1 s s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS VERY LOW NOISE AF AMPLIFIER NPN COMPLEMENTS FOR BC857 IS BC847 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CBO V CEO V EBO IC I CM I BM I EM P t ot T stg Tj Parameter BC857 Collector-Emitter Voltage (V BE = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Peak Current Emitter Peak Current Total Dissipation at T c = 25 oC Storage Temperature Max. O perating Junction Temperature -50 -50 -45 -5 -0.1 -0.2 -0.2 -0.2 300 -65 to 150 150 Value BC858 -30 -30 -30 V V V V A A A A mW o o Uni t C C October 1997 1/5 BC857/BC858 THERMAL DATA R t hj-amb R th j-SR Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 420 330 o o C/W C/W Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CE = -30 V V CE = -30 V I C = -10 µ A for BC857 for BC858 I C = -10 µ A for BC857 for BC858 I C = -2 mA for BC857 for BC858 I C = -10 µ A for BC857 for BC858 I C = -10 mA I C = -100 mA I C = -10 mA I C = -100 mA I C = -2 mA I C = -10 mA I C = -10 µ A for g rou p A for g ...