2N5460 (SILICON)
thru
2N5465
P-channel depletion mode (Type A) junction fieldeffect transistors designed for use in gen...
2N5460 (SILICON)
thru
2N5465
P-channel depletion mode (Type A) junction fieldeffect
transistors designed for use in general-purpose amplifier applications.
MAXIMUM RATINGS
Rating
2N5460 2N5463
2N5461 2N5464 Symbol 2N5462 2N5465 Unit
Drain-Gate Voltage
VDG
40
60 Vdc
Reverse Gate-Source Voltage
VGS(r)
40
60 Vdc
Forward Gate Current
IG(f)
10 mAdc
CASE 29
e (TO-92l 1 1 3 STYLE 7·
PIN 1 SOURCE 1 DRAIN 3. GATE
Total Device Dissipation @ TA = 25·C
PDI'}
310
mW
Derate above 25°C Storage Temperature Range
Operating Junction Temperature Range
T III stg T III J
2.82 -65 to +150
-65 to +135
mW/"C ·C
·C
(1) Continuous package improvements have enhanced these guaranteed Maximum Ratings as
follows. Po = 1.0 W @ T C '" 25°C, Derate above 2SoC - 8.0 mW/oC, T J == -65 to + 150°C. 0JC == 12S o C/W.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwISe noted)
I ICharacteristic
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
- -(IG =10 /lAdc,...
