2N5476

2NS471 (SILICON) thru 2NS476 P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Depletion mode Junction Field-Effect Transistors designed for general-purpose amplifier and switching applications. High Gate·Source Breakdown Voltage V(BR)GSS = 40 Vdc (Min) for All Types High DC Input Resistance IGSS = 100 pAdc (Max) @ VGS = 10 Vdc Low Reverse Transfer Capacitance Crss = 1.0pF (Max)@VDs=-15Vdc Tight IDSS Range for Easier Circuit Design Drain and Source Interchangeable P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS 'MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Total Power Dissipation @TA = 250 C Derate above 2SoC Operating Channel Temperature Range Storage Temperature Range *Indicates JEDEC Registered Data. Symbol VOG VGSR IGF Po Tchannel T stg Value 40 40 10 300 2.0 -65 to +175 -65 to +200 Unit Vde Vde mAde mW mW/oC °c °c -18~IrrdcB SEATING PLANE . - _ F _ _tI K ~ STYLE 2 PIN 1. SOURCE 2. GATE 3. ORAIN 4. SUBSTRATE...