2N5641

2N5641 (SILICON) 2N5642 2N5643 NPN SILICON RF POWER TRANSISTORS . designed for VH F power amplifier or oscillator applications in military and industrial equipment. These devices are particularly suited for use in Class AB, B, or C amplifier applications to 400 MHz. Balanced Emitter Construction to provide the designer with the device technology that assures ruggedness and resists transistor damage caused by load mismatch. Stripline packaging for lower lead inductance and better broad· band capability. Ceramic Packaging Specified 2B Volt, 175 MHz Characteristics2N5641 - 7.0 Watts Output Power at B.4 dB Gain 2N5642 - 20 Watts Output Power at 8.2 dB Gain 2N5643 - 40 Watts Output Power at 7.6 dB Gain -MAXIMUM RATINGS Rating Collect.,..·Emitter Voltago Collector·Sase Voltago Emitter·Sase Voltage Collector Current - Continuous Totel Device Dissipation @ TA =250 e Derate above 250 e Operating and Storage Junction Temperature Range ·lndlcatel JEOEC Registered Data. Sy...