File No. 83 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
ffilrnLJD
Solid State Division
RF Power Tra...
File No. 83 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
ffilrnLJD
Solid State Division
RF Power
Transistors 2N918 2N3600
RCA-2N918 and RCA-2N3600 are double-diffused epitaxial planar
transistors of the silicon n-p-n type. They are extremely useful in low-noise-amplifier, oscillator, and converter applications at VHF frequencies.
These devices utilize a hermetically sealed fourlead JEDEC TO-72 package. All active elements of the
transistor are insulated from the case, which may be grounded by means of the fourth lead in applications requiring minimum feedback capacitance, shielding of the device, or both.
MAXIMUM RATINGS, Absolute-Maximum Values:
2N918 2N3600
COLLECTOR-TD-BASE VOLTAGE, VCSO' . . . . . . . . . .. 30
30 mnx. V
COLLECTOR-1'D-EMITTER VOLTAGE, VCEO' .......... .
15
15 max. V
EMITTER-TD-SASE VOLTAGE.VESO··········· .
COLLECTOR CURRENT, Ic .....
50
max. V max. rnA
TRANSISTOR DISSIPATION, P T:
For operation with heat sink:
At case
...
