2N2016

File No. 12 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ OOCD5LJD Solid State Division Power Transistors 2N2015 2N2016 RCA 2N2015 and 2N2016 are diffused-junction power transistors of the silicon n-p-n type having very high powerdissipation capabilities (150watts). The 2N20l5 and 2N2016 are particularly useful in power-switching circuits such as those employed in dc-ta-de converters, inverters, choppers, and relay-control equipment. They are also extremely useful in oscillator, regulator, and pulse-amplifier circuits, and as class A and class B push-pull amplifiers for af and servo applications. Maximum Ratings, Absolute-Maximum Values: 2H2015 2N2016 COLLECTOR-TO-BASE YOLTAGE. COLLECTOR-TO- EMITTER VOLTAGE: Wi th base open (Sustaining voltage) EMITTER-TO-BASE YOLTAGE. COLLECTOR CURRENT. EMITTER CURRENT. BASE CURRENT . TRANSISTOR DISSIPATION:' At case t.emperatures up to 25° C. . At other case temperatures TEMPERATURE RANGE: Operating and Storage. LEAD...