40911 Datasheet: Power Transistors





40911 Power Transistors Datasheet

Part Number 40911
Description Power Transistors
Manufacture RCA
Total Page 7 Pages
PDF Download Download 40911 Datasheet PDF

Features: File No. 527 OO(]3LJ1] Solid State Divis ion Power Transistors 2N3054 2N6260 2N 6261 40372 40910 40911 nHometaxial e M edium-Power Silicon N-P-N Transistors JEDEC T0-66 JEDECTO·66 With I"tegral H eat Radiator Rugged Devices for Interm ediate-Power Applications in Industrial and COlnmercialEquipment Features: • fT = 800 kHz at 0.2 A (2N3054, 40372) • Maximum saf...a......of·operation curves for de and pulse operation " VCE V(sus) = 90 V min (2N3054, 2N6261) = =I I Low saturation voltage: VCE(sat) 1.0 V at IC 0.5 A (2N3054) RCA 2N3054, 2N6 260, and 2N6061 are hometaxial·basesil icon n·p-n transistors intended for a wide variety of medium- to high-power a pplications. Types 40372, 40910, and 40 911 are the 2N3054, 2N6260, and 2N6061 with factory-attached heat radiators in tended for printed-circuit-board applic ations. • "Hometaxia'" was coined by RCA from "homogeneous" and "axia'" to d escribe a single-ciiffused transistor w ith a base region of homogeneous-resistivity in the axial direc.

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File No. 527
OO(]3LJ1]
Solid State
Division
Power Transistors
2N3054 2N6260 2N6261
40372 40910 40911
nHometaxial e Medium-Power
Silicon N-P-N Transistors
JEDEC T0-66
JEDECTO·66
With I"tegral Heat Radiator
Rugged Devices for Intermediate-Power Applications in
Industrial and COlnmercialEquipment
Features:
• fT = 800 kHz at 0.2 A (2N3054, 40372)
• Maximum saf...a......of·operation curves for de and pulse
operation
" VCEV(sus) = 90 V min (2N3054, 2N6261)
= =II Low saturation voltage: VCE(sat) 1.0 V at IC 0.5 A
(2N3054)
RCA 2N3054, 2N6260, and 2N6061 are hometaxial·base-
silicon n·p-n transistors intended for a wide variety of
medium- to high-power applications.
Types 40372, 40910, and 40911 are the 2N3054, 2N6260,
and 2N6061 with factory-attached heat radiators intended
for printed-circuit-board applications.
• "Hometaxia'" was coined by RCA from "homogeneous" and
"axia'" to describe a single-ciiffused transistor with a base region of
homogeneous-resistivity in the axial direction (emitter-to-collector,).
Applications:
• Power switching circuits
" Series- and shunt-re",lator driver and output stages
a High-fidelity amplifiers
• Solenoid drive..
"Hometaxial II" is a term 'used to describe RCA's expanded line of
transistors produced by the hometaxial process.
MAXIMUM RATINGS. Absolute-Maximum Values:
·COLLECTOR-TO-BASE VOLTAGE ................................... .
COLLECTOR-TO-EMITTER VOLTAGE:
• With base open ..........•......•.................................
*
With external base-to-emitter
loon ..resistance (RBE) =
..
...
..
.. .
...
..
...
..
..
...
..
...
..
..
...
..
..
.
With base reverse-biased
(VBE=-1·5V) .................................................. ..
"EMITTER-TQ-BASE VOLTAGE •••••••••••••••••••••.•••••.••••••••.•••
"CONTINUOUS COLLECTOR
CURRENT ...................................................... .
·CONTINUOUS BASE CURRENT ••••••••••••••••••••••.••••...•••••••••
TRANSISTOR DISSIPATION:
* At case temperature up tQ 25°C ..................................... .
A1 ambient temperatures up to 250 C ........•.........................
• At temperatures. above 25°C ............ ~ ........................... .
·TEMPERATURE RANGE:
Storage & Operating (Junction) ...................................... .
··PIN TEMPERATURE (During Soldering):
At distance :;::1/32 in. (0.8 mm)
from seating plane for 10 s max. . ................................... .
VCBO
2N6260
40910
50
VCEO
40
VeER(sus)
45
2N3054
40372
90
55
50
2N6261
40911
90
80
85
V
V
V
VCEV(susl
50
90
90 V
VEBO
5
7
7V
IC 3 4 4 A
IB 2 2 2 A
PT
29 25 50 w
(2N6250) (2N3054) (2N6261)
6.8 5.8 5.B w
(40910)
(403721
(40911)
SeeFigs.4& 17 5•• Figs.4&9 SfiFigs.I&7
- - - - - . . -65 to 2 0 0 _
235
*In accordance with JEOEC registration data format JS-9 ROF-10 (2N3054), JS-6 AOF·2 (2N6260, 2N6261)
B-74
85

                    






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