40390 Transistors Datasheet

40390 Datasheet, PDF, Equivalent


Part Number

40390

Description

Power Transistors

Manufacture

RCA

Total Page 5 Pages
Datasheet
Download 40390 Datasheet


40390
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Fiie No. 64
OOClBLJlJ
Solid State
Division
Power Transistors
2N4063
2N3439 2N4064
2N3440 40390
High-Voltage Silicon
N-P-N Transistors
For High-Speed Switching and
Linear-Amplifier Applications
40390
Features
• High voitage ratings:
Vceo = 450 V max. (2N3439, 2N4063)
These devices are available with either 1%-
= 300 V max. (2N3440; 2N4064)
inch leads (TO-5 package) or %-inch leads
VCEO{sus) = 350 V max. (2N3439, 2N4063)
= 250 V max. (2N3440, 2N4064)
Maximum-area~f-operation curves
(TO-39 package). Thelonger-lead versions are
specified by suffix "L" after the type num-
ber; the shorter-lead versions are specified by
suffix "S" after the type number.
• Low saturation voltages
RCA-2N3439*, 2N3440**, 2N4063, 2N4064, and 40390 are
epitaxial-base silicon n-p-n transistors with high breakdown
Voltages. high-frequency response, and fast switching speeds.
These transistors are intended for industrial, commercial, and
military equipment. Typical applications include high-voltage
differential and operational amplifiers, high-voltage inverters,
and high-voltage, lew-current switching and series regulators.
The 2N3439 and the 2N3440 differ .primarily in their voltage
ratings; the 2N4063 and 2N4064 have the same voltage ratings
as the 2N3439 and 2N3440 respectively, but employ a flange
package. Type 40390 is a 2N3440 with a factory·attached heat
radiator; it is intended for printed-circuit-board applications.
* Formerly RCA Dev. No. TA245B.
** Formerly RCA Dev. No. TA2470.
Absolute-Maximum Values:
2N3439
2N4063
2N3440
2N4064
40390
COLLECTOR-TO-BASE VOLTAGF.. . . . . . . . . . . . . . . . . . . . . . . . . VCBO
450 300
Y
COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE ............ . VCF:O(SUS)
350
250
Y
EMITTER-TO-BASE VOLTAGE •.......................... VEBO
77 V
COLLECTOR CURRENT • . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC
I
A
BASE CURRENT. . . . • . . . . . . . . . . . . . . . . . . . . . . . . . • . . . . . . IB
0.5 0.5
A
TRANSISTOR DISSIPATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
At case temperatures up to 250 C. . . . . . . . . . . . . . . . . . . . . . . . .
At free-l1ir temperatures up to 250 C . • . . . . • • . . . . • . . . . • . . . . .
At free~air temperatures up to 50~ C . . . . • . • • . . . . . . . . . . . . . • .
At free-air temperatures above 250 C or 500 C . . . . . . . . . . . . . • . . .
For pulse operation ................................ .
TEMPERATURE RANGE:
Storage & Operating (Junction) ..•.........•.............
LEAD TEMPF.RATURE (During'soldering):
At distance;'; 1/32 in. from seating plane for 10 s max . . . . . . . . . . .
10 1O(2N3440) w
1O(2N4064) w
3.5(40390) w
1(2N3439) 1(2N344Q) W
See Fig. 2.
See Fig. 9.
..- -65'0200
°c
........; . - - - - 255 - - - -.... °c
104
9-73

40390
File No. 64 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N3439, 2N3440, 2N4063, 2N4064, 40390
ciELECTRICAL CHARACTERISTICS, At Case Temperature IT = 2!f'C
Characteristic
Collector-Cutoff Current
Emitter-Cutoff Current
DC Forward - Current Transfer Ratio
Collector-ta-Emitter
$ustaining Voltage:
(See Figs. 3 & 4.1
With base open
Symb.1
ICEO
ICEV
lEBO
hFE
TEST CONDITIONS
LIMITS
DC
Collector
Volts
DC
Emitter
or Base
Volts
DC
Current
(milliamperes)
Typos
2N3439
2N4063
Types
2N3440
2N4064
40390
Units
VCB VCE VEB VBE Ie IE IB Min. Max. Min. Max.
300
200
450 1.5
300 -1.5
0 20
/-LA
0 50 /-LA
500 /-LA
500 /-LA
60
20 20 /-LA
10 20 40 160 40 160
10 2 30
VCEO(sus)
-50 0 350· - 250·
V
Base-ta-Emitter
Saturation Voltage
Collector-ta-Emitter
Saturation Voltage
Small-5ignal, Forward-Curren,
Transfer Ratio (a'S MHz)
Output Capacitance (at IMHz)
Second-Breakdown
Collector Current:
With base forward biased
VBE(s.,)
VCE(sa,)
hfe 10
Cob 10
'IS/b
200
- -50 4 1.3 1.3 V
50 4 0.5 0.5 V
10
0
3 -3 -
10 10 pF
50 - 50 - rnA
Thermal Resistance:
Junction-ta-Case
BJ.C
- 17.5
17.5 °C/W
QCAUTION: The sustaining'voltage VCEO{sus) MUST NOT be measured on a curve tracer. The sustaining voltage
should be measured by means of the ,test circuit shown in Fig. 3.
~ 150
'~"
:;II) 125
~
~ 100
a~
o 25 50 75 100 125 150 175 200
EFFECTIVE CASE TEMP, OR CASE TEMP, ITEFF OR Tcl-"C
92CS'21992
Fig. 1 - Current derating curve for all types.
-75-50-25 0
II
FREE-AIR TEMPERATURE (TFA)--C
92lS-16OB
Fig. 2 - Dissipation derating curve for 2N3439, 2N3440, and 40390.
105


Features _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Fiie No. 64 OOClBLJlJ Solid State Division Power T ransistors 2N4063 2N3439 2N4064 2N3440 40390 High-Voltage Silicon N-P-N Trans istors For High-Speed Switching and Li near-Amplifier Applications 40390 Fea tures • High voitage ratings: Vceo = 450 V max. (2N3439, 2N4063) These de vices are available with either 1%- = 300 V max. (2N3440; 2N4064) inch leads (TO-5 package) or %-inch leads VCEO{s us) = 350 V max. (2N3439, 2N4063) = 250 V max. (2N3440, 2N4064) • Maximum-ar ea~f-operation curves (TO-39 package). Thelonger-lead versions are specified by suffix "L" after the type number; th e shorter-lead versions are specified b y suffix "S" after the type number. Low saturation voltages RCA-2N3439*, 2N3440**, 2N4063, 2N4064, and 40390 ar e epitaxial-base silicon n-p-n transist ors with high breakdown Voltages. high- frequency response, and fast switching speeds. These transistors are intended for industrial, commerci.
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