Power Transistors. 2N6500 Datasheet

2N6500 Transistors. Datasheet pdf. Equivalent


Part 2N6500
Description Power Transistors
Feature File No. 766 _________________________________ OOOBLJD Solid State Division Power Transistors 2N38.
Manufacture RCA
Datasheet
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2N6500 Datasheet
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2N6500 Datasheet
2N6500 Dimensions in mm (inches). 3.68 (0.145) rad. max. 2N6500 Datasheet
File No. 766 _________________________________ OOOBLJD Soli 2N6500 Datasheet
Recommendation Recommendation Datasheet 2N6500 Datasheet




2N6500
File No. 766 _________________________________
OOOBLJD
Solid State
Division
Power Transistors
2N3878 2N5202
2N3879 2N6500
40375
2N3878
2N3879
2N5202
2N6500
\t~.~'~
lHigh-Speed, Epitaxial-Collector
Silicon N-P-N Transistors
JEOEC TO·66
40375
H-1340
JEDECTO-66
H·1470A
With Integral Heat Radiator
For High·Speed Switching and
Linear·Amplifier Applications
Features:
a Maximum-area-of-operation curves for de and pulse operation
a Rated for safe operation in both forward- and reverse-bias conditions
" High sustaining voltage
a Total saturated transition time less than 1 p.s
for 2N3879, 2N5202, and 2N6500
RCA-2N3878, 2N3879, 2N5202, and 2N6500o are epitaxial
silicon n-p-n transistors. The 2N3878 is an amplifier type
intended for audio-, ultrasonic-, and radio-frequency circuits.
Types 2N3879, 2N5202, and 2N6500 are switching transistors
intended for use in high-current, high-speed switching circuits.
Type 40375 is a 2N3878 with a factory-attached heat radiator;
it is intended for printed circuit-board applications.
Typical applications for these transistors include: low-distor-
tion power amplifiers, oscillators, switching regulators, series
regulators, converters, and inverters.
• Formerly RCA Dev. Type Nos. TA2509, TA2509A, TA7285, and
TA8932, respectively.
MAXIMUM RATlNGS,Absolute-Maximum Values:
'COLLECTOR-TO-BASE VOLTAGE.
COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE:
With external base-to-emitter resistance (RBE) == 50 n.
With base open.
'EMITTER-TO-BASE VOLTAGE.
'CONTINUOUS COLLECTOR CURRENT
PEAK COLLECTOR CURRENT.
'CONTINUOUS BASE CURRENT.
'TRANSISTOR OISSIPATION.
At case temperature (TC) '" 25°C
At case temperatures above 25°C
At ambient temperature (TAl = 25°C
For other conditions .
*TEMPERATURE RANGE:
Storage & operating (Junction)
'PIN TEMPERATURE:
1/32 in. (0.8 mml from seating plane for 10 s max.
VCBO
VCER(SUS)
VCEO(sus)
VEBO
IC
ICM
IB
PT
2N3878
40375
120
2N3879 2N5202 2N65DD
120 100 120
65 90 75' 110*
50'
75' 50
90'
67
4 44
10 10
45
3512N3878) 35
35
Derate linearly at 0.2 W/oC
5.8140375)
See Figs. 5, 6, 7, and 8
35
- -65 to 200
235 235 235 235
* In accordance with JEDEC registration data format JS-6 RDF-2 (2N3878); JS-6 RDF·' (2N3879, 2N5202, 2N65001.
V
V
V
V
A
A
A
W
W
°c
°c
3-74 155



2N6500
2N3878-9,2N5202,2N6500,40375
File No. 766
ELECTRICAL CHARACTERISTICS,At Case Temperature (TC) = 2!PC unless otherwise specified:
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
VOLTAGE CURRENT
Vd.
Ad.
VCE VBE
IC IB
2N3878
40375
Min. Max.
LIMITS
2N3879
2NS202
Min. Max. Min. Max.
2N6500 UNITS
Min. Max.
Collector Cutoff Current:
With base-emitter junction reverse·
biased
With bose-emitter junction
reverse-biased and TC = 150°C
ICE V
100 -1.5
110 0
120 -1.5
100 -1.5
110 0
10
25 25
mA
10
10
With base open
ICED
40
70
0 5'
0
mA
* Emitter Cutoff Current
Collector-la-Emitter Sustaining
Voltage (see Figs.3 and 4):
With base open
With external base-te-emitter
resistance (Reel = 50 n
lEBO
VCEO{susl
VeER(SUS)
-6
-7
0.2
0.2
10
,
50a
65a
10
75~
90a
10
50a
75 a
25
90*a
110a
mA
V
DC Forward-Current Transfer
Ratio
1.2
2
hFE
* Collector-la-Emitter
Saturation Voltage
Vee(satl
'" Base-ta-Emitter Voltage
* Base-ta-Emitter Saturation
Voltage
VaE
VBE(sat)
Collector-to-Base Output
Capacitance:
If = , MHz, Vca = 10 VI
Cob
Second Breakdown Collector Current:
With base forwaro-biased and
l-s nonrepetitive pulse
ISlb
40
4b
0.5 b
3b
4b
4b
0.5b
3b 0.3
4b 0.4
4b
3b 0.3
4b 0.4
40* 200*
8'
20*
50' 200*
2.5
12' 100*
20 80
40
1.2
10' lOa·
1.2
15* 60*
1.5
2.5
V
V
V
175*
175
175
175 pF
750 500 400
400 mA
Second-Breakdown Energy:
With base reverse-biased and
RSE = 50 n, Vas = -4 V
At L:: 50 IJH
AtL::125IJH
* Magnitude of Common Emitter,
Small·Signal, Short-Circuit,
Forward-Current Transfer
Ratio!(f:: 10 MHz}
* Common·Emitter, Small-Signal,
Short-Circuit, Forward-Current
Transfer Ratio:!f =: 1 kHz}
ESlbc
Ihfel
10
hfe 30
0.5 4
0.1 40
mJ
0.4
0.5
46
Thermal Resistance:
Junction-to-case
Junction-to-ambient
RO JC
ROJA
2N3878
- I5
40375
- 130
°C/W
• In accordance with JEDEC registration data format J5-6 RDF-2
12N38781; JS·6 RDF-l (2N3879, 2N5202. 2N65001.
a CAUTION: Sustaining voltages VCEO(susl and VCER(SUS) MUST
NOT be measured on a curve tracer.
b Pulsed, pulse duration'" 300 J.LS, duty factor ~ 2 %.
c ES/b is defined as the energy at which second breakdown occurs
under specified reverse-bias conditions. ES/b = 1I2L12 where L is a
series load or leakage inductance and I is the peak collector current.
156







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