2N6496

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 698 000800 Solid State Division Power Transistors 2N5038 2N5039 2N6496 JEDEC TO-3 H-1570 High-Current, High-Power, High-Speed Silicon N-P-N Power Transistors Devices for Switching and Amplifier Circuits in Industrial and Commercial Applications Features: Maximum operating area curves for de and pulse operation IS/b-limit line beginning at 28 V High collector current ratings High-dissipation capability RCA-2N5038. 2N5039, and 2N6496 are epitaxial silicon n-p-n power transistors. They differ in breakdown-voltage ratings, leakage-current, and dc-beta values_ The high current-handling capability of these transistors in conjunction with fast switching speeds make these devices especially suited for switching-control amplifiers. power gates. switching regulators, converters. and inverters. Other recommended applications include dc-rf amplifiers and power oscil- Switching Time: tr = 0_5 liS m...