_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 313
oornm
Power Transistors
Solid State Divisi...
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 313
oornm
Power
Transistors
Solid State Division
2N5262
Silicon N-P-N High-Speed Switching
Transistor
For Memory-Driver Service in Data-Processing Equipment and Other Critical Industrial Applications
Features:
"Modified TO-ag"
Fast switching at lA: ton = 30 ns max. toft.= 60 ns max.
High voltage ~tings
High..power.....ipation .atings High dc beta at lA - 25 min.
Low saturation voltage at 1 A: 0.5 V typo
Maximum·area-af-operation curves for de and pulse operation
Hermetic "low-profile T()'39" package Meets MI L-5-19500 specifications
RCA·2N5262- is a silicon n-p·n, epitaxial planar.tranSlstorwith characteristics which make it exceptiorljllly desirable for-I\ighspeed, high-voltage, high-current switching applications. In addition, the 2N5262 features very short turn.oo and turn-off times and low saturation v.oltages_ .It is also c.ontrolled for
freedom from second b'reak...