2N5146

2N5146 (SILICON) PNP SILICON ANNULAR MULTIPLE TRANSISTORS · .. designed for use in high current, high speed switching applications. Low Coliector·l;mitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 1.0 Adc DC Current Gain Specified - 20 (Min) @IC = 1.0 Adc High Current·Gain-Bandwidth Product - fT= 150 MHz (Min)@lc= 50 mAdc Fast Turn·On Time ton = 40 ns, toff = 110 ns PNPSILICON MULTIPLE TRANSISTORS *MAXIMUM RATINGS Rating Collector~Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Operating and Storage Junction Temperature Range Total Power Dissipation @ TA'" 2SoC Derate above 2SoC Total Power Dissipation@TC= 25°C Derate above 2SoC ·Indicates JEDEC Registered Data. Symbol VeEO VeB VEB Ie TJ,T"Q Value 40 40 5.0 1.5 -65 to +200 Unit Vdc Vdc Vdc Adc °e All Di. OneDie Equal Power Po 400 2.28 600 3.42 mW mW/oe Po 0.9 6.13 3.6 20.5 Watts mW/oe STYLE I PIN I COLLECTOR 2 BASE 3 EMITTER 4 NOT CONNECTED 5 EMITTER 6 8ASE 7 C...