2N5160 (SILICON)
PNP silicon RF power transistors designed for amplifier, frequency multiplier or oscillator applicatio...
2N5160 (SILICON)
PNP silicon RF power
transistors designed for amplifier, frequency multiplier or oscillator applications in military and industrial equipment. Suitable for use as Class A, B, or C output driver, or pre-driver stages in VHF and UHF.
CASE 79 (TO-39)
Collector connected to case
STYLE 1 PIN 1. EMITTER . 2. BASE 3. COLLECTOR
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
Collector Current Total Device Dissipation @TC = 25° C
Derate above 25° C Operating and Storage Junction
Temperature Range
Symbol Value Unit
VCEO
40
Vdc
VCB VEB
60 Vdc 4.0 Vdc
IC 0.4 Adc
PD 5.0 28.6
TJ , Tstg -65 to +200
Watts mW/oC
°c
=ELECTRICAL CHARACTERISTICS (TA 25'C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage
(IC = 5. a mAde, IB = 0)
Emitter-Base Breakdown Voltage
(IE =O. 1 mAde, IC = 0)
Collector Cutoff Current
(VCE = 28 Vdc, IB =0)
Collector Cutoff Current
(VCE = 60 Vdc, VBE =0)
Collecto...
