2N5208

2N5208 (SILICON) PNP SILICON ANNULAR TRANSISTOR · . . designed for general purpose RF amplifier applications in the frequency range up to 300 MHz. < Low Collector-Base Time Constant - rb 'Cc lOps Low Noise Figure N.F. = 3.0dB max @ 100 MHz High Power Gain - Gpe = 22 dB min @100 MHz CompleteY-Parameter Curves Low Leakage Current - ICBO< 10 nAdc@VCB= 10 V Stability Factor Curves - For Direct Circuit DeSign PNP SILICON SWITCHING AND AMPLIFIER TRANSISTOR *MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Power Dissipation @ TA = 25°C Derate above 2SoC Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO Vca VEa IC Po Po TJ.Tstg Value 25 30 3.0 50 350 2.8 1.0 B.O -55 to +150 Unit Vdc Vdc Vdc mAde mW mW/oC Watt mWf'C °c THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, ...