2NS221 (SILICON)
PNP SILICON ANNULAR TRANSISTOR
... designed for low-power, large signal audio and general-purpose ampl...
2NS221 (SILICON)
PNP SILICON ANNULAR
TRANSISTOR
... designed for low-power, large signal audio and general-purpose amplifier applications. Complements
NPN type 2N5220. Low Saturation Voltage - VCE(sat) = 0.5 Vdc (Max)
@ IC = 150 mAde, 18 = 15 mAde
PNPSILICON AMPLIFIER
TRANSISTOR
'MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Power Dissipation @TA - 2SoC
Derate above 2SoC
Total Power Dissipation@Tc ::: 25°C Derate above 2SoC
Operating and Storage Junction Temperature Range
Symbol VCEO VCS VES
Ie
Po
Po
TJ,Tstg
Value
15
15
3.0
500
310 350 2.8 2.73
1.0 8.0
-55 to +135 -55 to +150
Unit Vdc Vdc Vdc mAde mW
mWPC
Watt mWPC
°c
THERMAL CHARACTERISTICS
Characteristic
~hermal Resistance, Junction to Ambient
Symbol R6JAll)
Max 357
Unit °CIW
Thermal Resistance, Junction to Case
R6JC
125 °C/W
Indicates JE DEC Registered Data. (1) R9JA is measured with the device soldered into II typical printe...
