Document
2N5222 (SILICON)
NPN SILICON ANNULAR TRANSISTOR
... designed for RF amplifier, mixer, and video IF applications.
• High Current· Gain-Bandwidth Product fT = 450 MHz (Min) @ IC = 4.0 mAde
• Coliector·Emitter Saturation VoltageVCE = 1.0 Vdc (Max) @ IC = 4.0 mAde
• Low Collector· Base Capacitance Ccb= 1.3pF (Max)@VCB=10Vdc
NPN SILICON AMPLIFIER TRANSISTOR
*MAXIMUM RATINGS Rating
Coilector·Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Power Dissipation @ TA == 2SoC Derate above 2SoC
Total Power Dissipation @ TC = 25°C Derate above 2sOC
Operating and Storage Junction Temperature Range
Symbol VCEO Vce VEe
IC
Po
Po
TJ,Tstg
Value
15 20 2.0
50 350 2.8 1.0 8.0 -55 to +150
Unit Vdc Vdc Vdc
mAde mW
mW/oC
Watt mWPC
°c
THERMAL CHARACTERISTICS Characteristic
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case
Symbol ReJA(1)
ReJC
Max 357 125
Unit °CIW °CIW
• Indicates JEDEC Registered Data. (1) R9JA .