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2N5222 Dataheets PDF



Part Number 2N5222
Manufacturers ETC
Logo ETC
Description NPN SILICON ANNULAR TRANSISTOR
Datasheet 2N5222 Datasheet2N5222 Datasheet (PDF)

2N5222 (SILICON) NPN SILICON ANNULAR TRANSISTOR ... designed for RF amplifier, mixer, and video IF applications. • High Current· Gain-Bandwidth Product fT = 450 MHz (Min) @ IC = 4.0 mAde • Coliector·Emitter Saturation VoltageVCE = 1.0 Vdc (Max) @ IC = 4.0 mAde • Low Collector· Base Capacitance Ccb= 1.3pF (Max)@VCB=10Vdc NPN SILICON AMPLIFIER TRANSISTOR *MAXIMUM RATINGS Rating Coilector·Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Power Dissi.

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2N5222 (SILICON) NPN SILICON ANNULAR TRANSISTOR ... designed for RF amplifier, mixer, and video IF applications. • High Current· Gain-Bandwidth Product fT = 450 MHz (Min) @ IC = 4.0 mAde • Coliector·Emitter Saturation VoltageVCE = 1.0 Vdc (Max) @ IC = 4.0 mAde • Low Collector· Base Capacitance Ccb= 1.3pF (Max)@VCB=10Vdc NPN SILICON AMPLIFIER TRANSISTOR *MAXIMUM RATINGS Rating Coilector·Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Power Dissipation @ TA == 2SoC Derate above 2SoC Total Power Dissipation @ TC = 25°C Derate above 2sOC Operating and Storage Junction Temperature Range Symbol VCEO Vce VEe IC Po Po TJ,Tstg Value 15 20 2.0 50 350 2.8 1.0 8.0 -55 to +150 Unit Vdc Vdc Vdc mAde mW mW/oC Watt mWPC °c THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol ReJA(1) ReJC Max 357 125 Unit °CIW °CIW • Indicates JEDEC Registered Data. (1) R9JA .


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