2N5223 (SILICON)
NPN SILICON AMPLIFIER TRANSISTOR
· .. designed for low-level. small-signal. general-purpose amplifier ...
2N5223 (SILICON)
NPN SILICON AMPLIFIER
TRANSISTOR
· .. designed for low-level. small-signal. general-purpose amplifier applications.
High Current-Gain-Bandwidth Product fT = 150 MHz (Min) @ IC = 10 mAdc-
Collector-Emitter Saturation VoltageVCE(sat) = 0.7 Vdc (Max) @ IC = 10 mAdc
Collector-Base CapacitanceCcb= 4.0 pF (Max)@ VCB = 10 Vdc
NPN SILICON AMPLIFIER
TRANSISTOR
"MAXIMUM RATINGS Rating
Collector-Emitter Voltage Collector-Ba.. Voltage
Emitter-Base Voltage
Collector Current - Continuous Total Power Dissipation @ T A "" 25°C
Derate above 2SOC Total Power Dissipation @ TC = 25°C
Darato above 2sOC Operating Bnd Storage Junction
Temperature Range
Symbol VCEO VCB VEB
IC
Po
Po
TJ.Tstg
Value 20 25
3.0 100
350 2.8 1.0 8.0 -55 to +150
Unit Vdc Vdc Vdc
mAde mW
mW/oC
Watt mWJOC
°c
"THERMAL CHARACTERISTICS Characteristic
Thermal Resistance. Junction to Ambient Thermal Resistance, Junction to Case
Symbol R8JA(1)
R8JC
Max 357 125
Unit °CIW °CIW
""'ndicates JEOEC Regi...
