2NS227 (SILICON)
PNP SILICON ANNULAR TRANSISTOR
... designed for general·purpose amplifier applications.
• Current Gain...
2NS227 (SILICON)
PNP SILICON ANNULAR
TRANSISTOR
... designed for general·purpose amplifier applications.
Current Gain Specified at 100 IlAdc and 2.0 mAde Low Collector· Emitter Saturation Voltage -
VCE(sat) = 0.4 Vdc (Max) @ IC = 10 mAde Collector· Base Capacitance -
Ccb = 5.0 pF (Max) @ VCB = 10 Vdc
PNP SILICON AMPLIFIER
TRANSISTOR
"MAXIMUM RATINGS
Rating Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous Total Power Dissipation @ T A "" 2SoC
Derate above 2SoC
Total Power Dissipation @ TC =- 2SoC
Derate above 2SoC
Operating and Storage Junction Temperature Range
Symbol VCEO VCS VES
IC
Po
Po
TJ,Tstg
Value
30 30 3.0
50 350 2.8 1.0 8.0 -55 to +150
Unit Vdc Vdc Vdc
mAde mW
mW/oC
Watt mW/oC
°c
"THERMAL CHARACTERISTICS Characteristic
Thermal Resistance, Junction to Ambient Thermal Aesistance, Junction to Case
Symbol RaJA{l)
RaJC
Max 357 125
Unit °CIW °CIW
* Indicates JEOEC Registered Data. (1) ROJA is measured wi...
