BC857ALT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC856ALT1/D General Purpose Transistors BC856ALT1,BLT1 BC857ALT1, COLLECTOR 3 PNP Silicon 1 BASE BLT1,CLT1 BC858ALT1,BLT1, CLT1 Motorola Preferred Devices MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC BC856 –65 –80 –5.0 –100 BC857 –45 –50 –5.0 –100 BC858 –30 –30 –5.0 –100 2 EMITTER Unit V V V mAdc CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) 1 2 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W Max Unit DEVICE MARKING BC856ALT1 = 3A; BC856BLT1 = 3B; BC857ALT1 = 3E; BC857BLT1 = 3F; BC857CLT1 = 3G; BC858ALT1 = 3J; BC858BLT1 = 3K; BC858CLT1 = 3L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –10 mA) Collector – Emitter Breakdown Voltage (IC = –10 µA, VEB = 0) Collector – Base Breakdown Voltage (IC = –10 mA) Emitter – Base Breakdown Voltage (IE = –1.0 mA) BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Serie...