Document
51491N (SILICON) lN51S0
The RF Line
SILICON HIGH FREQUENCY STEP-RECOVERY POWER VARACTORS
... designed for 100 MHz to 2 GHz harmonic-generation applications with output power to 25 Watts at 1 GHz.
• Specified fin = 0.5 GHz, fout = 1.0 GHz CharacteristicsInput Power = 20 W - lN5149 = 37 W - 1N5150 Output Power = 11 W - 1N5149 = 24 W - lN5150 Efficiency = 55% -IN5149 =65%-IN5150
• Characterized with Doubling, Tri piing and Quadrupling Curves
• 100% Functionally Tested as a Doubler@ 1.0 GHz
MAXIMUM RATINGS Rating
Reverse Voltage Forward Current
R F Power I"put Total Device Dissipation @ T A"" 75°C
Derate above 7SoC Operating and Storage Junction
Temperature Range
Symbol lN5149 11N5150 VR 80 IF 1.0 Pin 25 40
IIPo 10 14 0.08 0.11 TJ.Tstg -65 to +200
Unit Volts Amp
Watts Watts W/aC
°c
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case
lN5160 Symbol Max
ROJC
9.0
Unit aC/W
ELECTRICAL CHARACTERISTICS ITA ~ 25°C unless otherwise noted 1
Characteristic.