1N5150A

IN5150A (SILICON) IN5153A IN5155A Silicon high-frequency step-recovery power varactor devices optimized for critical multiplier applications requiring tight control of junction capacitance and power dissipation. CASE 46 ~. Anode ~ 1. Cathode IN~155A ~A"~' ~ 1. Cathode CASE 47 IN5150A IN5153A MAXIMUM RATINGS Rating Reverse Voltage Forward Current RF Power Input Total Device Dissipation @lTC = 25° C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VR IF Pin Po TJ' Tstg lN5150A 80 lN5153A 75 1000 250 40 15 29.2 11.7 167 66.7 - 4 - - - -65 to +200 lN5155A 35 .200 7.0 8.75 ..50 Unit Vdc mAdc Watts Watts mW/"C °c 1-8 1N5150A, 1N5153A, 1N5155A (continued) ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise noted) Characteristics Reverse Breakdown Voltage (IR =10 /lAdc) Reverse Current (VR =70 Vdc) (V R = 70 Vdc, TA =l50·C) (VR =60 Vdc) (VR = 60 Vdc, TA = l50·C) (VR =26 Vdc) (VR =26 Vdc, TA =l50·C) lN5l50A lN5l53A lN5l55A lN5l50A lN5l50A...