1N5158 thru 1N5160 1N5779 thru 1N5793
PNPN 4-LAYER DIODES
· .. two terminal, fast·switching devices specifically design...
1N5158 thru 1N5160 1N5779 thru 1N5793
P
NPN 4-LAYER DIODES
· .. two terminal, fast·switching devices specifically designed for low voltage applications such as logic circuits, pu Ise generators, memory and relay drivers, relay replacements, alarm circuits, multivibrators, ring counters, and telephone switching circuits. These devices feature:
Low Breakover (Switching) Voltage - 10 to 15·Volt Ratings
Fast Switching Speeds - ton = 75 ns (Typ) toff = 250 ns (Typ)
Low Junction Capacitance - 45 pF (Typ) Low Breakover Currents
Subminiature Glass Package
MAXIMUM RATINGS ITA =250 C unless olherwise'noledl
Rating
'It Reverse Voltage
lN5158, lN5782, lN5788 1N5159, 1N5783, 1N5789 1N5160, 1N5784, 1N5790 1N5779, 1N5785, 1N5791 lN5780,1N5786,1N5792 1N5781, 1N5787, 1N5793
·Continuous Forward Current
*Steady State Power Dissipation @TA = 500C Derate above 5O"c
*Peak Pulse Current (50 j,ts maximum pulse Width)
·Operating Junction Temperature Range
Storage Temperature Ra...