BC857T
PNP Silicon AF Transistor
For AF input stages and driver applications High current gain Low collector-emitt...
BC857T
PNP Silicon AF
Transistor
For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Complementary types: BC847...T
3
2 1
VPS05996
Type BC857AT BC857BT
Maximum Ratings Parameter
Marking 3Es 3Fs 1=B 1=B
Pin Configuration 2=E 2=E 3=C 3=C
Package SC75 SC75
Symbol VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg
Value 45 50 50 5 100 200 250 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Total power dissipation, TS = 109 °C Junction temperature Storage temperature
mA mW °C
Thermal Resistance Junction - soldering point 1) RthJS
165
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Nov-29-2001
BC857T
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Emitter-base breakdown voltage IE = 1 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain IC = 10 µA, VCE = 5 V DC current gain IC = 2 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Bas...
