1N5444A

lNS441A,B,C (SILICON) thru INS456A,B,C VVC -+II- SILICON EPICAP DIODES . epitaxial passivated abrupt junction tuning diodes designed for electronic tuning, FM, AFC and harmonic·generation applications in AM through UHF ranges, providing solid·state reliability to replace mechanical tuning methods. Excellent a Factor at High Frequencies Guaranteed Capacitance Change - 2.0 to 30 V Guaranteed Temperature Coefficient Capacitance Tolerance - 10%,5.0%, and 2.0% Complete Typical Design Cu rYes VOLTAGE-VARIABLE CAPACITANCE DIODES 6.8 -100 pF 30 VOLTS **MAXIMUM RATINGS Rating Symbol Reverse Voltage Oevice Dissipation @ TA =. 2SoC Derate above 2SoC VR Po Operating Junction Temperature Range Storage Temperature Range TJ Tstg Value 30 400 2.67 +175 -65 to +200 Unit Volts mW mW/oC °c °c ., *1 ndicates JE OEC Registered Data. liB @) o K CATHODE BAND rt·-l K L MILLIMETERS INCHES DIM MIN MAX MIN MAX A 5.84 7.62 0.230 0.300 B 2.16 2.72 0.085 0.107 0 0.46 0.56...