SILICON EPICAP DIODES
lNS441A,B,C (SILICON)
thru
INS456A,B,C
VVC -+II-
SILICON EPICAP DIODES
. epitaxial passivated abrupt junction tuning dio...
Description
lNS441A,B,C (SILICON)
thru
INS456A,B,C
VVC -+II-
SILICON EPICAP DIODES
. epitaxial passivated abrupt junction tuning diodes designed for electronic tuning, FM, AFC and harmonic·generation applications in AM through UHF ranges, providing solid·state reliability to replace mechanical tuning methods.
Excellent a Factor at High Frequencies
Guaranteed Capacitance Change - 2.0 to 30 V Guaranteed Temperature Coefficient Capacitance Tolerance - 10%,5.0%, and 2.0% Complete Typical Design Cu rYes
VOLTAGE-VARIABLE CAPACITANCE DIODES
6.8 -100 pF 30 VOLTS
**MAXIMUM RATINGS
Rating
Symbol
Reverse Voltage
Oevice Dissipation @ TA =. 2SoC Derate above 2SoC
VR
Po
Operating Junction Temperature Range Storage Temperature Range
TJ Tstg
Value
30 400 2.67
+175 -65 to +200
Unit
Volts
mW mW/oC
°c °c
., *1 ndicates JE OEC Registered Data.
liB @)
o
K
CATHODE BAND
rt·-l
K
L
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 5.84 7.62 0.230 0.300
B 2.16 2.72 0.085 0.107
0 0.46 0.56...
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