BC857AWT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC856AWT1/D General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. 1 BASE COLLECTOR 3 BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1, CWT1 Motorola Preferred Devices MAXIMUM RATINGS 2 EMITTER Rating Symbol BC856 BC857 BC858 Unit Collector – Emitter Voltage VCEO –65 –45 –30 V Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous VCBO VEBO IC –80 –5.0 –100 –50 –5.0 –100 –30 –5.0 –100 V V mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board, (1) PD 150 mW TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING RqJA TJ, Tstg 833 – 55 to +150 °C/W °C BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F; BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –10 mA) BC856 Series BC857 Series BC858 Series Collector – Emitter Breakdown Voltage (IC = –10 µA, VEB = 0) BC856 Series BC857 Series BC858 Series Collector – Base Breakdown Voltage (IC = –10 mA) BC856 Series BC857 Series BC858 Series Emitter – Base Breakdown Voltage (IE = –1.0 mA) BC856 Series BC857 Series BC858 Series Col...