1N5762A

1N5758,A thru 1N5762,A (SILICON) SILICON 3-LAYER BILATERAL TRIGGERS ... Annular, two terminal devices that exhibit bi-directional negative resistance switching characteristics. These economical, durable devices have been developed for use in thyristor triggering circuits for lamp drivers and universal motor speed controls. Switching Voltage Range - 20 to 36 Volts Nominal Symmetrical Characteristics Passivated Surface for Reliability and Uniformity SILICON BILATERAL TRIGGERS *MAXIMUM RATINGS ITA· 250 C unless otherWise noted I Rating Peak Pulse Current (30 f,J.S duration, 120 Hz repetition rate) Power Dissipation @ T A = -40 to +2SoC Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol Ipul se Po TJ T stg Value 2.0 300 4.0 -40 to +100 -40 to +150 Unit Amp mW mWf'C °c °c 'ELECTRICAL CHARACTERISTICS ITA· 25°C unless otherwise noted I Characteristic Symbol Switching Voltage (80th Directions) lN5758 lN5759 lN5760 lN5761 lN5762...