2N5070 (SILICON)
The RF Line
NPN SILICON RF POWER TRANSISTORS
... designed primarily for applications.s. high-power lin...
2N5070 (SILICON)
The RF Line
NPN SILICON RF POWER
TRANSISTORS
... designed primarily for applications.s. high-power linear amplifier from 2.0 to 75 MHz.
Optimized for Operation from a 28-Volt Supply Power Out@ 28 Vdc, 30 MHz - 25 W (PEP) Intermodulation Distortion at 25 W (PEP)
IMD = 30 dB (Max)
Isothermal-Resistor Design Results in Rugged Device
25 W (PEP) - 30 MHz
RF POWER
TRANSISTOR NPN SILICON
'MAXIMUM RATINGS Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous
Peak Base Current - Continuous Total Device Dissipation@Tc - 25°C
Derate above 2SoC Operating and Storage Junction
Temperature Range
·'ndicates JEDEC Registered Data.
Symbol VCEO VCSO VESO
IC
IS
Po
TJ,Tstg
Value 30
65 4.0 3.3 10 1.0 70 400 -65 to +200
Unit Vdc Vdc Vdc Adc
Adc Watts mW/oC
°c
STYLE' PIN 1 EMITTER 2 BASE
3.COL:ECTOJ~lt
" l "F ::::!....ll
i + Fr.;SEATING
- ~pi \ t
pLA1NOE-32UNF2~
J
j
51-
MILLIMETERS INC ES
DIM MIN MAX MIN MAX...
