S1376
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATION...
S1376
SILICON
PNP EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS,
FEATURES . Complementary to S1375
Unit in mm
9.9MAX. 03.2±O.2
W- -$
a.
m
0.6 6
MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL v CBO VCEO Vebo ic IB
?C TJ T stg
RATING -80 -80 -5
-750 -500
1.5 150 -55-150
UNIT V V V
mA mA
W °C °C
Tr-rp;
4*
',3-
,9, 9 MAX.
1. EMITTER 2. BASE 3- COLLECTOR (HEAT SINK)
JEDEC
TOSHIBA Weight : 1.4g
ELECTRICAL CHARACTERISTICS (Ta=25 C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current Collector-Emitter Breakdown Voltage
ICB0 x EB0
V CB=-30V, I E=0 V EB =-5V, I C =0
v (BR) CEO I c =-10mA, Ib=0
DC Current Gain
hFE(l) hFE(2)
Collector-Emitter Saturation Voltage
v CE(sat)
Base-Emitter Voltage
VBE
Transition Fr...
