DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
MBD128
BC857BS PNP general purpose double transistor
Product d...
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
MBD128
BC857BS
PNP general purpose double
transistor
Product data sheet Supersedes data of 1997 Jul 09
1999 Apr 26
NXP Semiconductors
PNP general purpose double
transistor
Product data sheet
BC857BS
FEATURES
Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and boardspace No mutual interference between the
transistors.
APPLICATIONS General purpose switching and amplification.
DESCRIPTION
PNP double
transistor in an SC-88; SOT363 plastic package.
NPN complement: BC847BS.
MARKING TYPE NUMBER
BC857BS
MARKING CODE 3Ft
PINNING
PIN 1, 4 2, 5 6, 3
emitter base collector
DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2
handbook, halfpage
654
12 3 Top view
65 4
TR2 TR1
123
MAM339
Fig.1 Simplified outline (SC-88; SOT363) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per
transistor
VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb
collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature
Per device
Ptot
total power dissipation
open emitter open base open collector
Tamb ≤ 25 °C
Tamb ≤ 25 °C; note 1
Note 1. Device mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
−
−50
V
−
−45
V
−
...