:
SILICON PNP TRIPLE DIFFUSED TYPE
33
POWER AMPLIFIER, SWITCHING CIRCUIT AND REGULATOR APPLICATIONS.
FEATURES
. High ...
:
SILICON
PNP TRIPLE DIFFUSED TYPE
33
POWER AMPLIFIER, SWITCHING CIRCUIT AND
REGULATOR APPLICATIONS.
FEATURES
. High Gain and Excellent hFE Linearity: hFE=15(Min.) @ VC E=-2V, Ic=-3A
Low Saturation Voltage: VcE(sat)=-1.0V(Max.)
@ I C=-4A, Ib=-0.4A
Unit in mm
MAXIMUM RATINGS (Ta=25 C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Peak
Base Current
Collector Power Dissipation (Tc=25°C)Derate Linearly above 25 & C
Junction Temperature
% Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC I CM IB
L Stg
RATING -80 -80 -7 -10 -15 -4 150 0.86 200
-65~ 200
UNIT
u w/ c
1. BASE 2. EMITTER
COLLECTOR (CASE)
TO—2 4MA/T0—
TC— 3, TB—
TOSHIBA
2-21D1A
Weight : 12. 6g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. TYP. MAX. UNIT
Collector Cut-off Current
ICEX
VCE=-80V, VBE=1.5V
- - -1 mA
Collector Cut-off Current Collector Cut-off Current
ICEX ICEO
VCE=-80V, VBE=1.5V ...
