:
SILICON PNP TRIPLE DIFFUSED TYPE
33
HIGH POWER SWITCHING, AMPLIFIER, DC-DC CONVERTER, INVERTER AND REGULATOR APPLICA...
:
SILICON
PNP TRIPLE DIFFUSED TYPE
33
HIGH POWER SWITCHING, AMPLIFIER, DC-DC CONVERTER, INVERTER AND
REGULATOR APPLICATIONS
Unit in mm
FEATURES
. Specification for hpE and VcE(sat) UP to 30A: hpE=5.0 (Min.) @ VCE=-4.0V, I C=-30A VCE(sat)=-4.0V (Max.) @ Ic=-30A, I B=-6A
. Low Saturation Voltage: vCE(sat)=-0.75V (Max.) @ I C=-10A, I B=-1.0A vBE(sat)="l-6V (Max.) @ I C=-10A, I B=-1.0A
. High Collector Power Dissipation Capability: P C=200W (Max.)
. Complementary to 2N5301
MAXIMUM RATINGS (Ta=25°C)
1. BASE 2. EMITTER
COLLECTOR (CASE)
TOSHIBA
TO—2 4MA/T0— TC—3, TB— 2-21D1A
Weight : 12. 6g
CHARACTERISTIC
SYMBOL - RATING
Collector-Base Voltage
Collector-Emitter Sustaining Voltage
Emitter-Base Voltage
Collector Current
DC Peak
VCBO v CEO(SUS)
Vebo
ic
-40 -40 -5.0 -30 -50
Base Current
DC Peak
IB
-7.5 -15
Collector Power Dissipation
Ta=25°C .. . _
Derate above 25 C Tc=25°C
Derate above 25 C
PC pC
5.0 28.6
200 1.15
Junction Temperature Storage Temperature Ran...
