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BD137 Datasheet, Equivalent, NPN Transistor.Silicon NPN Transistor Silicon NPN Transistor |
| Part | BD137 |
|---|---|
| Description | Silicon NPN Transistor |
| Feature | SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
BD135 BD137
BD1 39I
MEDIUM POWER AMP LIFIER APPLICATIONS. FEATURES . Designe d for Complementary Use with BD136, BD1 38 and BD140. 7. 9MAX. Unit in mm MAX IMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BD135 BD137 B D139 Collector-Emitter Voltage BD135 BD137 BD139 Emitter-Base Voltage Coll ector Current DC Peak Collector Power Dissipation Ta=25 C Tc^60 C Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO Vebo I CM RATING 4 5 60 80 45 60 80 0. 5 1. 5 PC L stg 6. 5 150 -55-150 UNIT 1. EMITTER Z. COLLE CTOR (HEAT S IN . |
| Manufacture | Toshiba |
| Datasheet |
| Part | BD137 |
|---|---|
| Description | Silicon NPN Transistor |
| Feature | SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
BD135 BD137
BD1 39I
MEDIUM POWER AMP LIFIER APPLICATIONS. FEATURES . Designe d for Complementary Use with BD136, BD1 38 and BD140. 7. 9MAX. Unit in mm MAX IMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BD135 BD137 B D139 Collector-Emitter Voltage BD135 BD137 BD139 Emitter-Base Voltage Coll ector Current DC Peak Collector Power Dissipation Ta=25 C Tc^60 C Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO Vebo I CM RATING 4 5 60 80 45 60 80 0. 5 1. 5 PC L stg 6. 5 150 -55-150 UNIT 1. EMITTER Z. COLLE CTOR (HEAT S IN . |
| Manufacture | Toshiba |
| Datasheet |
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